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Spin polarization induced by optical and microwave resonance radiation in a Si vacancy in SiC: A promising subject for the spectroscopy of single defects
Authors
Baranov P.
Borovykh I.
+4 more
Bundakova A.
Orlinski S.
Schmidt J.
Zondervan R.
Publication date
1 January 2007
Publisher
Abstract
Depending on the temperature, crystal polytype, and crystal position, two opposite schemes have been observed for the optical alignment of the populations of spin sublevels in the ground state of a Si vacancy in SiC upon irradiation with unpolarized light at frequencies of zero-phonon lines. A giant change by a factor of 2-3 has been found in the luminescence intensity of zero-phonon lines in zero magnetic field upon absorption of microwave radiation with energy equal to the fine-structure splitting of spin sublevels of the vacancy ground state, which opens up possibilities for magnetic resonance detection at a single vacancy. © 2007 Pleiades Publishing, Ltd
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Kazan Federal University Digital Repository
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oai:dspace.kpfu.ru:net/136190
Last time updated on 07/05/2019
Kazan Federal University Digital Repository
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:dspace.kpfu.ru:net/101045
Last time updated on 07/05/2019