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Ultra-Fast Perpendicular Spin-Orbit Torque MRAM
Authors
De Loubens G.
Gambardella P.
+7 more
Garello K.
Gaudin G.
Klein O.
Langer J.
Miron I.
Naletov V.
Ocker B.
Publication date
1 January 2018
Publisher
Abstract
© 1965-2012 IEEE. We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin-orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications
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Last time updated on 07/05/2019