© 1965-2012 IEEE. We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin-orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications

De Loubens G.

Gambardella P.

Garello K.

Gaudin G.

Klein O.

Langer J.

Miron I.

Naletov V.

Ocker B.

IEEE Transactions on Magnetics

Kazan Federal University Digital Repository

IEEE Transactions on Magnetics 2018 vol.54 N4Ultra-Fast Perpendicular Spin-Orbit Torque MRAMGarello K., Miron I., Klein O., De Loubens G., Naletov V., Langer J., Ocker B., Gambardella P.,Gaudin G.Kazan Federal University, 420008, Kremlevskaya 18, Kazan, RussiaAbstract© 1965-2012 IEEE. We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switchingof a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The criticalcurrent density rises significantly as the current pulse shortens below 10 ns, which translatesinto a minimum in the write energy in the nanosecond range. Our results show that spin-orbittorque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications.http://dx.doi.org/10.1109/TMAG.2017.2772185KeywordsCache memory, MRAM, spin transfer, spin transfer torque-magnetic random access memory(STT-MRAM), spin-orbit torque, spin-orbit torque-MRAM (SOT-MRAM), spintronicsReferences[1] The  In ternat iona l  Techno logy  Roadmap  fo r  Semiconductors .  [On l ine] .  Ava i lab le :http: / /www. i t rs .net /L inks/2013ITRS/2013Chapters/2013ERD.  pdf[2] G. Jan et al, "Demonstration of fully functional 8 Mb perpendicular STT-MRAM chips with sub-5ns writing fornon-volatile embedded memories, " in Symp. VLSI Technol. (VLSI-Technology), Dig. Tech. Papers, Jun. 2014, pp.1-2.[3] H. Liu, D. Bedau, D. Backes, J. A. Katine, J. Langer, and A. D. Kent, "Ultrafast switching in magnetic tunneljunction based orthogonal spin transfer devices, " Appl. Phys. Lett, vol. 97, no. 24, p. 242510, 2010.[4] M. 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Ultra-Fast Perpendicular Spin-Orbit Torque MRAM

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Ultra-Fast Perpendicular Spin-Orbit Torque MRAM

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