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Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions
Authors
Bazarov V.
Nuzhdin V.
+4 more
Osin Y.
Stepanov A.
Valeev V.
Vorobev V.
Publication date
1 January 2016
Publisher
Abstract
© 2016, Springer Science+Business Media New York.Amorphous silicon (a-Si) produced on surfaces of single-crystal substrates (c-Si) by low-energy low-dose implantation of silver ions is studied by spectral ellipsometry and electron backscatter diffraction. Implantation was done with an ion energy of 30 keV at a constant ion beam current density of 2 μA/cm2 and doses of 6.24·1012–1.25·1016 ions/cm2 on room temperature substrate targets. Irradiation was carried out with a current density of 0.1–5 μA/cm2 for implantation doses of 6.24·1013 and 1.87·1014 ions/cm2. It was found that spectral ellipsometry is an accurate andreliable method for monitoring low-dose ion implantation processes
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Kazan Federal University Digital Repository
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oai:dspace.kpfu.ru:net/105056
Last time updated on 07/05/2019
Kazan Federal University Digital Repository
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:dspace.kpfu.ru:net/142712
Last time updated on 07/05/2019