Krozer, Viktor

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Design of a planar Schottky diode based 200 GHz frequency multiplier

We present design of a 200 GHz frequency multiplier based on commercially available Schottky diodes. The device model has been extracted from millimeter-wave small-signal S-parameter measurements. The frequency multiplier is fully planar on alumina substrates. The resulting conversion efficiency is 18.9% at 96 GHz input frequency. The multiplier is contacted with the help of especially designed CPW to microstrip transitions

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Downloaded from orbit.dtu.dk on: Dec 17, 2017Design of a planar Schottky diode based 200 GHz frequency multiplierKrozer, ViktorPublished in:Proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th InternationalConference on Terahertz ElectronicsLink to article, DOI:10.1109/ICIMW.2006.368519Publication date:2006Document VersionPublisher's PDF, also known as Version of recordLink back to DTU OrbitCitation (APA):Krozer, V. (2006). Design of a planar Schottky diode based 200 GHz frequency multiplier. In Proceedings of theJoint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference onTerahertz Electronics IEEE. DOI: 10.1109/ICIMW.2006.368519Millimeter Waves SystemsDesign of a planar Schottky diode based 200 GHz frequency multiplierTueP-78Viktor KrozerElectromagnetic Systems, Oersted*DTU, Technical University of Denmark, DK-2800 Lyngby, Denmark, email:vk@oersted.dtu.dk and with ATHENE e.V., Merckstrasse 25, D-64297 DarmstadtAbstract- We present design of a 200 GHz fre-quency multiplier based on commercially available Schot-tky diodes. The device model has been extracted frommillimeter-wave small-signal S-parameter measurements.The frequency multiplier is fully planar on alumina sub-strates. The resulting conversion efficiency is 18.9% at 96GHz input frequency. The multiplier is contacted with thehelp of especially designed CPW to microstrip transitions.INTRODUCTIONThe work presented here introduces MMIC-basedmultiplier and mixer circuits for THz frequencies. Thework presented here employs simulation tools developedearlier [1], [2] to design a fully planar frequency multi-plier with CPW feeds suitable for future implementationas an MMIC. Commercially available Schottky diodesfrom United Monolithic Semiconductors (UMS) havebeen used in the design, requiring special design andextra modelling effort. The parasitic model extraction ispresented below together with the frequency multipliercircuit design.DIODE MODELLING AND MULTIPLIER DESIGNThe full equivalent circuit for the UMS Schottkydiode DBES105a is provided in fig.1 together with acomparison between the extracted model parameters andmeasured S-parameters. This device is comprised of twoSchottky diodes in series. Both the amplitude and theThe device equivalent circuit was then used for thedesign of a frequency multiplier at an input frequency of96 GHz. The frequency multiplier exhibits a conversionloss of around 18.9% with an output power of roughly5.6 mW, at a dynamic DC current of 6mA. The bias waschosen to be Vbias =-2V. The fundamental impedanceiS Zf,,nd = (19.5 + j64.2) Q, while the impedance atthe second harmonic is determined to be Z2.fund =(23.56 + j46.5) Q. These impedances take into accountthe parasitic effects stemming from the chip design.The time-waveforms for the current and voltage acrossthe diode for these conditions can be depicted in fig.?? together with the layout of the frequency multiplier.Here one can depict the CPW contact pads with theirtransition to microstrip lines. There is a slight phase shiftbetween the current and the voltage, which indicates thatparasitic effects play an important role in this diode. Asmall asymmetry is also visible, but should not have alarge impact on the device performance.Fig. 2. Time waveforms for the diode voltage and current and thecircuit topology for the frequency multiplier.5 0 > @2~~~ ~ ~~ ~~~~~~~~~~~~~~~~~~~1 X < >H:00 20 30 40 sO 630 70 80 0 10 20 30 40 50 60 70 810frequency (GHz) frequjency (GHz)Fig. 1. Schottky diode equivalent circuit and comparison between theextracted circuit model of and measured small-signal S-parameters..phase are well modelled over the frequency range.It can be concluded that a very good agreement hasbeen achieved between EM simulations and an equiv-alent circuit exhibiting parasitic elements. The accessstructure exhibits a resistance of the order of 1 Q perdiode together with a series inductance of around 30pH. The capacitance modelling is a little more difficult,because the parasitic capacitance is distributed betweenthe two contact access lines. A value of 14 fF and21 fF have been found for the parasitic capacitances,respectively.1-4244L-0400-21061$20.00 ©2006 IEEECONCLUSIONSWe show a successful design of a frequency multiplierbased on commercial Schottky diodes in planar technol-ogy. Microstrip lines are employed in the circuit. Thenovel simulation tools developed earlier are employedin the design of the multiplier. The simulated resultsindicate a conversion efficiency of 18.9% with an outputpower of around 5.6mW at 192 GHz.REFERENCES[1] 0. Nipp, V. Krozer, J. G. de la Fuente, J. V. S. Perez, andB. Leone, "Analytical modelling of thz frequency multipliers andmixers based on schottky diodes," in 16th Intern. Symp. on SpaceTerahertz Technology - ISSTT 2005, Gothenborg, May2-4 2005,may 2005.[2] J. Grajal, J. S. Perez, V. Krozer, E. Sbarra, and B. Leone, "Analysisand design of Schottky diode multiplier chains up to terahertzfrequencies," in Proc. Joint 29th International Conference onInfrared and Millimeter Waves and 12th International Conferenceon Terahertz Electronics, (Karlsruhe, Germany), September 27 -October 1, 2004. invited keynote talk.311Authorized licensed use limited to: Danmarks Tekniske Informationscenter. Downloaded on November 20, 2009 at 09:49 from IEEE Xplore.  Restrictions apply. 

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Design of a planar Schottky diode based 200 GHz frequency multiplier

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