Depla, Diederik

Schelfhout, Roeland

Strijckmans, Koen

Ghent University Academic Bibliography

K. Strijckmans, R. Schelfhout, D. DeplaResearch Group DRAFT, Dpt. of Solid State SciencesGhent University, Belgium.  Dedicated Research on Advanced Films and TargetsRAFTResearch group DRAFTDpt. of Solid State SciencesGhent UniversityKrijgslaan 281/S1B-9000 Gent Koen Strijckmans+3292644368Koen.Strijckmans@UGent.bewww.DRAFT.UGent.be The (in)stability of process control mechanisms in reactive DC sputtering depositionSimulation software Solution : Voltage control ? Problem : Criticality mechanisms during reactive deposition   SIMTRAversion 2.1.1GUI + manualGUI + manualdeposition:number densitiesenergy distributionincidence directionSystem observables:  reactive gas pressure  discharge current/voltage  target/substrate stateOperation parameters:   reactive gas flow  pumping speed  discharge current/voltage= test particleMonte Carlomodel= balance equationmodelhigher/lower reactive gaspressuremore/lesstarget reactionlower/higherdeposition rateless/more reactivegas gettering bysubstrateI=0.35 AQO2=1.2 sccmhigher/lower compoundfractionlower/highererosion speedmore/less implanted reactive gasmore/less time to reactmore/less targetreactionarget drivenT ubstrate drivenSmetallic TST"traditional" hysteresis"double" hysteresisR. Schelfhout et al., Applied Physics Letters 109, 111605 (2016) 0204060800.8 1.2 1.6Oxygen pressure (mPa)Oxygen flow (sccm)increasing flowdecreasing flowS    0.10.20.30.40.50.60.7240 280 320 360 400Discharge current (A)Discharge voltage (V)decreasing voltageincreasing voltageSSTTPlanar 2 inch Al DC sputtered in Ar/O2 atmosphereS=30 L/soxidizedmetallicoxidizedS=5 L/sQO2=0.6 sccmS=30 L/sQO2=1.2 sccm3D representation setuptarget racetrackinitial energy/angular distribution sputter gas pressure/temperature interaction potentialINPUTdeposition rates film composition uniformity controlOUTPUToperation and material  parametersINPUTOUTPUToperation process curves (with hysteresis)  process curve O(S)Al - Al2O30204060801000.01 0.1 1Target composition (%)Reactive gas fractionTiO2Ti2O3TiOTiReactive IV-characteristicis in fact a mixture of fourI=ki(V-Vi,0)2with i=Ti, TiO, Ti2O3, TiO2and ki ~         wherestable           reactive IV-characteristic         = superposition of metallic and oxidized I=km/ox(V-Vm/ox,0)2where k ~            reactive IV-characteristic         = superposition of metallic and ONE oxidized IV ?No!Different oxidation states?In-vacuo XPS determinationof target composition provesexistence of two additionalsub-oxides TiO and Ti2O3along hysteresis.0.10.20.30.40.50.60.7320 360 400 440Discharge current (A)Discharge voltage (V)decreasing currentincreasing currentRSD20130.10.20.30.40.50.60.7240 280 320 360 400Discharge current (A)Discharge voltage (V)decreasing voltageincreasing voltageRSD2013 0.10.20.30.40.50.60.70.80.91240 280 320 360 400 440Discharge current (A)Discharge voltage (V)04231QO2 (sccm)I Iunstable Ti - TiO2 - ...

The (in)stability of process control mechanisms in reactive DC sputtering deposition

https://biblio.ugent.be/publication/8612298/file/8612299.pdf

The (in)stability of process control mechanisms in reactive DC sputtering deposition

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