We study the spin dynamics of ZnSe layers with embedded type-II ZnTe quantum dots using time
resolved Kerr rotation (TRKR). Three samples were grown with an increasing amount of Te, which
correlates with increased quantum dot (QD) density. Samples with a higher quantum dot density
exhibit longer electron spin lifetimes, up to 1 ns at low temperatures. Tellurium isoelectronic centers,
which form in the ZnSe spacer regions as a result of the growth conditions, were probed via spectrally
dependent TRKR. Temperature dependent TRKR results show that samples with high QD density are
not affected by an electron-hole exchange dephasing mechanism
