Effects of zirconium (Zr) doping into BiVO4 electrode on its structural properties and photoelectrochemical (PEC) property for water oxidation were examined. The BiVO4 electrodes with different Zr contents were prepared via a spin-coating process. Structural analyses using XRD and Raman spectroscopy indicated that all the samples consisted of mixtures of monoclinic scheelite (ms-BiVO4) and tetragonal scheelite (ts-BiVO4) structures. The highest PEC property for water oxidation was achieved when the sample doped with a relatively small amount of Zr (i.e., 0.5% of Zr-doped BiVO4); further doping caused a reduction of PEC property, probably due to the enhancement of carrier recombination induced by such excess Zr components