Borghs, G.

de Boeck, J.

Liu, Z.

Motsnyi, V.F.

Sawicki, M.

van Dorpe, P.

van Roy, W.

Abstract: We demonstrate an electrically injected electron spin polarization in GaAs of 80% at 4.6 K by interband tunneling from the valence band of (Ga,Mn)As into an (Al,Ga)As light-emitting diode. The polarization is analyzed by the oblique Hanle effect and vanishes at 120 K, the Curie temperature of the (Ga,Mn)As injector. The temperature and the bias dependence of the polarization are explained in terms of the properties of the (Ga,Mn)As/GaAs diode. (C) 2004 American Institute of Physics

Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode

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