Borghs, Gustaaf

Goovaerts, Etienne

Romandic, I.

Van Bragt, F.

Van Hoof, Chris A.

Zurauskiene, N.

Abstract: We have studied the optical response of two single-barrier AlAs/GaAs tunneling-based light-emitting diodes (TLED's) excited by Very fast electrical pulses (transition times of less than 100 ps). The grown TLED's were identical except for the barrier width, which was chosen to be 4 and 6 nm, respectively. Streak-camera time-resolved spectra were recorded at room and liquid-nitrogen temperature, while simultaneously monitoring the current and voltage pulses. Both diodes show very fast switch-on and switch-off, with the room temperature 3-dB modulation bandwidth of 3 GHz for the 6 nm sample and 1.8 GHz for the 4 nm TLED

Fast electro-optical switching of single-barrier tunneling LED's

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