Borghs, G

Dargys, A.

Goovaerts, Etienne

Van Hoof, C.

Zurauskiene, N.

Abstract: Experimental results on dynamical breakdown of metastable centers in Al0.3Ga0.7As caused by fast ramped electric fields are presented. The electrical breakdown was found to begin abruptly above threshold field F-th=(1.71+/-0.34)x10(5) V/cm. Persistent conductivity after the breakdown was observed at low temperatures. The breakdown is explained by ionization of DX centers by hot carriers

DX center breakdown in high electric fields

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