Frangis, N.

Hemment, PLF

Nejim, A.

Stoemenos, J

van Landuyt, Joseph

Abstract: The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix

Ion beam synthesis of <tex>\beta$</tex>-SiC at 950 degrees C and structural characterization

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