Results of electrical characterization of Au nucleated InAs₁ˍₓSbₓnanowiresgrown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAsnanowires is observed for a Sb content of x = 0.13. Pure InSbnanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs₁ˍₓSbₓ shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires.This work received financial support from the Nanometer
Structure Consortium at Lund University (nmC@LU), the
Swedish Research Council (VR), the Swedish Foundation for
Strategic Research (SSF), and the Knut and Alice Wallenberg
Foundation (KAW). It also received financial support from
the French National Research Agency (ANR), TERADOT
project, under Contract No.ANR-11-JS04-002-01