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新型热电SnSe半导体晶体研究进展
Authors
徐家跃
李雨萌
+3 more
田甜
申慧
金敏
Publication date
1 January 2018
Publisher
Abstract
SnSe晶体是一种新型Ⅳ-Ⅵ族化合物半导体热电材料,具有极低的本征热导率和超高的热电优值ZT,因兼具有高性能、环境友好以及成本低廉等综合优势,近些年正成为国际上争相研究的热点。然而SnSe晶体属于层状结构材料且热膨胀性复杂,导致晶体在生长过程中极易出现解理和开裂,难以获得大尺寸晶体。本文对当前国内外几种主流SnSe晶体生长方法进行了归纳,包括水平气相法、垂直布里奇曼法、垂直温度梯度法等,综合评价了各种方法的优缺点。重点介绍了本团队在水平布里奇曼法生长SnSe晶体方面的研究结果,该方法有望成为未来制备高质量、大尺寸SnSe晶体的一种主流技术。此外,还将不同SnSe晶体的热电优值ZT进行了比较,并对其性能波动进行了初步分析。本综述论文将有助于加深人们对SnSe晶体生长特性的认识,并为未来该晶体材料制备和性能研究提供参考
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Last time updated on 07/01/2019