Galvanical isolated microinverter with GaN transistors for photovoltaic modules

Abstract

A microinverter with GaN transistors is presented in this work. It consists of two stages: a DC-DC-stage with HF galvanic isolation in combination with an inverter stage. High efficiency above 97.5 % is reached in all stages. The weight of the demonstrator developed is 492 gr at 675 cm³