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Material Dependence of Thermally Assisted Magnetization Reversal Properties in Microstructured Co/Pd Multilayers

Abstract

Using extraordinary Hall resistance (RH) measurements, the material dependence of thermally assisted magnetization reversal (TAMR) was investigated for microstructured multilayers of [Co (0.17 nm)/Pd (0.80 nm)]N with N ¼ 7 and 20, which exhibit markedly different magnetic properties. The threshold values of the external field (Hw,th) necessary for controlling the magnetization direction in TAMR, obtained by direct application of a current pulse to the sample, were 220Oe for the N ¼ 7 and 710Oe for N ¼ 20 samples. The values of Hw,th are found to be related to the magnetization saturation field at a critical temperature at which apparent coercivity decays

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