Heidari, Hadi

Tanwear, Asfand

Zuo, Siming

English

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www.gla.ac.uk/melabUniversity of Glasgow, charity number SC004401Rmin = 74.86ΩRTMR(a) (b) (c) (d)[2][3]Modelling of Spintronic Nanodevices for Neuromorphic Sensing ChipsWe developed a finite element method-based model of anMgO-barrier TMR device in COMSOL Multiphysics® forintegrated circuit designers to implement them in a hybridspintronic-CMOS system [1].OVERVIEWSiming Zuo, Asfand Tanwear and Hadi HeidariMicroelectronics Lab (meLAB), School of Engineering, University of Glasgow, United KingdomHadi.heidari@glasgow.ac.ukTMR STRUCTURE AND MODELINGSIMULATION RESULTSREFERENCES[1] S. Zuo, K. Nazarpour, and H. Heidari, “Device modelling of MgO-barrier tunnelling magnetoresistors for hybrid spintronic-CMOS,” IEEE Electron Device Lett., 2018.[2] J. Amaral et al., “Integration of TMR sensors in silicon microneedles for magnetic measurements of neurons,” IEEE Trans. Magnetics, vol. 49, no. 7, pp. 3512–3515, 2013.[3] V. Nabaei, R. Chandrawati, and H. Heidari, “Magnetic Biosensors: Modelling and Simulation,” Biosens. Bioelectron., vol. 103, no. December 2017, pp. 69–86, 2017.[4] Z. Yin, E. Bonizzoni, and H. Heidari, “Magnetoresistive Biosensors for On-Chip Detection and Localization of Paramagnetic Particles,” IEEE J. Electromagn. RF MicrowavesMed. Biol., vol. 2, no. 3, pp. 179–185, 2018.[5] H. Heidari, E. Bonizzoni, U. Gatti, and F. Maloberti, “Analysis and modeling of four-folded vertical Hall devices in current domain,” in IEEE Conference on Ph.D. Research inMicroelectronics and Electronics (PRIME), 2014, pp. 1–4.CONCLUSION AND FUTURE WORKFigure 1: Proposed idea for extracting data from COMSOL Multiphysics® to Cadence© environment.Figure 3: Effect of tox on (a) the anti-parallel and (b) the parallel resistances of the TMR sensor with different bias voltages. (c) Effect of tox on TMR ratio with different biasvoltages. (d) TMR response compared to [2].Figure 2: (a) TMR structure for FEM simulations; (b) Mesh created inCOMSOL software and then zooming in on the MTJ.A novel TMR compact model was developed using Verilog-A extracted from accurate 3D FEM simulation. The effect of theinsulator layer’s thickness of TMR performance was presented for supporting spintronic-CMOS magnetic sensor development.A TMR ratio of 233% with 10 mV power supply was obtained from COMSOL and was verified Verilog-A model in Cadence.These results are consistent with previous experimental results of fabricated MTJ samples reported in the literature, whichshow a higher TMR ratio and better small range linearization.

Modelling of Spintronic Nanodevices for Neuromorphic Sensing Chips

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Modelling of Spintronic Nanodevices for Neuromorphic Sensing Chips

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