The influence of the segregation of Cu-rich phase on the microstructural and impedance characteristics of CaCu3Ti4O12CaCu_3Ti_4O_{12} ceramics

Abstract

The influence of sintering conditions on the microstructural features and impedance characteristics of the giant dielectric constant material CaCu3Ti4O12CaCu_3Ti_4O_{12} (CCTO) was investigated. The microstructure and impedance characteristics were found to be strongly dependent on the sintering conditions. Sintering of the CCTO ceramics at elevated temperatures (>1100oC)(>1100^ oC) for prolonged durations resulted in the segregation of Cu-rich phase, mostly confined to the surface, which was in concomitance with the appearance of the additional semicircle at the low frequency end in Impedance (Zβˆ—)(Z^\ast) plots. The absence of this additional semicircle in the Cu-deficient CCTO ceramics and the appearance of the same in Cu-rich CCTO ceramics that were deliberately fabricated corroborated the above observations. Also, La2/3Cu3Ti4O12La_{2/3}Cu_3Ti_4O_{12} (LCTO), a low dielectric constant member of CCTO family, which consisted of small grains without the segregation of Cu-rich phase at the grain boundary, did not reveal the presence of additional semicircle in the Zβˆ—Z^\ast plots

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