Titanium dioxide films have been deposited using DC magnetron sputtering technique. Films were deposited onto RCA cleaned p-silicon substrates at the ambient temperature at an oxygen partial pressure of 7×10−5 mbar and sputtering pressure of 1×10−3 mbar. The deposited films were annealed in the temperature range 673-873 K. The structure and composition of the films were confirmed using X-ray diffraction and Auger electron spectroscopy. The structure of the films deposited at the ambient was found to be amorphous and the films annealed at 673 K and above were crystalline with anatase structure. The lattice constants, grain size, microstrain and the dislocation density of the film are calculated and correlated with annealing temperature