Strain-induced Metallic Behavior in PrNiO3PrNiO_3 Epitaxial Thin Films

Abstract

Electrical transport properties of RniO3RniO_3 (R=Pr, Nd, Sm) thin films grown by pulsed laser deposition have been studied. RNiO3 films grow in the (1 0 0) direction on a LaAlO3LaAlO_3 (1 0 0) substrate. Unlike the polycrystalline solid, PrNiO3PrNiO_3 films showed metallic behavior. The first-order metal-to-insulator transition observed in polycrystalline solids is suppressed in RniO3RniO_3 films. The effect of lattice strain in the films influencing the transport properties has been studied by varying the thickness of PrNiO3PrNiO_3 film on LaAlO3LaAlO_3 (1 0 0) and also by growing them on SrTiO3SrTiO_3 (1 0 0) and Ξ±βˆ’Al2O3(11Λ‰02)\alpha-Al_2O_3 (1 \={1}02) substrates. Deviation in the transport properties is explained due to the strain-induced growth of the films. Further, we show that the transport property of a LaNiO3LaNiO_3 film is also influenced by a similar strain effect

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