Data for Growth and characterisation of MnSb (0001) / InGaAs (111) A epitaxial films

Abstract

MnSb layers have been grown on In x Ga 1 − x As(111)A virtual substrates using molecular beam epitaxy (MBE). The effects of both substrate temperature ( T sub ) and Sb/Mn beam flux ratio ( J Sb/Mn) were investigated. The sur- face morphology, layer and interface structural quality, and magnetic prop- erties have been studied for a 3 × 3 grid of T sub and J Sb/Mn values. Com- pared to known optimal MBE conditions for MnSb/GaAs(111) [ T sub =415 ◦ C, J Sb/Mn =6.5], a lower substrate temperature is required for sharp interface formation when growing MnSb on In 0 . 48 Ga 0 . 52 As(111)A [ T sub =350 ◦ C, J Sb/Mn =6.5]. At high flux ratio ( J Sb/Mn =9.5) elemental Sb is readily incorporated into MnSb films. At higher substrate temperatures and lower flux ratios, (In,Ga)Sb inclusions in the MnSb are formed, as well as MnAs inclusions within the substrate. The Sb and (In,Ga)Sb inclusions are epitaxial, while MnAs in- clusions are endotaxial, i.e. all have a crytallographic relationship to the substrate and epilayer. MBE optimisation towards different device struc- tures is discussed along with results from a two-stage growth scheme