We present here a study on Active Pixel Sensor processed thanks to CMOS deep sub-micron technology dedicated to
imaging. Isolated single photodiodes and 128x128 3T-pixel arrays were designed on the test chips. These devices were
exposed to 60Co g-ray and proton irradiation to observe the space environment impact on CMOS image sensors. Ionization and displacement damage induced dark current increases in the photodiode due to interface states and trapped charges. Solutions to harden photodiodes manufactured against space radiation environment are discussed
