A novel principle has been developed to build an ultra wide dynamic range digital CMOS image sensor. Multiple integrations are used to achieve the required dynamic. Its innovative readout system allows a direct capture of the final image from the different exposure time with no need of external reconstruction. The sensor readout system is entirely digital, implementing an in-pixel ADC. Realized in the STMicroelectronics 0.13μm CMOS standard technology, the 10μm x 10μm pixels contain 42 transistors with a fill factor of 25%. The sensor is able to capture more than 120dB dynamic range scenes at video rate

Guilvard, Alexandre

Magnan, Pierre

Martin-Gonthier, Philippe

Segura, Josep

English

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A digital high-dynamic-range CMOS image sensor with multi-integration and pixel readout request

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A Digital High Dynamic Range CMOS Image Sensor with Multi- Integration and Pixel Readout Request  Alexandre Guilvard1, Josep Segura1, Pierre Magnan2, Philippe Martin-Gonthier2 1STMicroelectronics, Crolles, France; 2CIMI/Supaero, Toulouse, France   ABSTRACT  A novel principle has been developed to build an ultra wide dynamic range digital CMOS image sensor. Multiple integrations are used to achieve the required dynamic. Its innovative readout system allows a direct capture of the final image from the different exposure time with no need of external reconstruction. The sensor readout system is entirely digital, implementing an in-pixel ADC. Realized in the STMicroelectronics 0.13μm CMOS standard technology, the 10μm x 10μm pixels contain 42 transistors with a fill factor of 25%. The sensor is able to capture more than 120dB dynamic range scenes at video rate.  Keywords: High dynamic range CMOS image sensor, multiple integrations, in-pixel ADC, event-driven readout chain.   1. INTRODUCTION The natural scenes can have very different lightening conditions, from 10-3 lux for night vision to 105 lux for bright sunlight. In order to define the capability of an image sensor of capturing such fluctuant scenes, the Dynamic Range was defined as 20.log(S/N), where S is the maximum illumination tolerated by the sensor without saturating and N the noise measured on a dark pixel (with no impinging photon).  In several applications such as automobile or automotive, the roughly 60dB dynamic of a standard CMOS imager does not allow to keep all the relevant information content of the captured scene. High Dynamic Range (HDR) CMOS image sensors were developed using different principles.  The first method uses a photodiode pixel with the reset transistor gate polarized to VDD. Therefore, a logarithmic function is obtained, linking the illuminance of the pixel to its resulting voltage. However, this method induces a high noise level on the resulting image. Several methods have been proposed to increase the image quality [1, 2].  Another method aims at controlling the collection of the photogenerated carriers along the integration to avoid the pixel saturation under high illumination level [3, 4, 5]. However, this method induces a deterioration of the SNR.  In the sensor presented, multiple integration times are used to extend the sensor dynamic range and to build a unique HDR frame [6, 7, 8] (Fig 1).      Copyright 2007 Society of Photo-Optical Instrumentation Engineers. This paper was published in "Proceedings of SPIE - Volume 6501 - Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII" and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. Mostly digital, the sensor uses photodiode based pixel with an in-pixel ADC [9], that allows a built-in dynamic compression function by non uniform quantization. The sensor implements an innovative and fast event based readout chain, to avoid the readout of the entire pixel array after each integration. Pixels directly request for readout, and the captured frame is rebuilt along the different integrations, with no pixel loss or measurement errors thanks to the request-acknowledge readout principle (Fig 2).     The pixel values are coded using the mantissa-exponent principle which allows the use of numerous built-in dynamic compression functions, making this sensor very versatile.     2. DIGITAL PIXEL WITH READOUT REQUEST   2.1 In-pixel ADC and pixel readout request.   The chosen principle to readout the photodiode voltage is to digitize the voltage value in pixel. An ADC has then been implemented in each pixel using an autozero comparator to minimize the Fixed Pattern Noise (FPN) (cf. Fig.3).  A shutter has also been implemented. After a defined integration time, the photodiode voltage is transferred to a readout node being shielded against light to avoid voltage variation during digitizing. The stored voltage is compared to a voltage ramp common to all the pixels, and generated by a unique 10 bits DAC with 1mV resolution.      When the ramp voltage is larger than the voltage stored on Csn, the comparator flips, and a readout request is sent by the pixel. Once detected and processed, the read pixel is attributed the digital input value of the DAC together with its address coordinates.   2.2 Pixel request processing with no possible conflict.   In order to read the array with no pixel loss and no possible conflicts, the readout requests have been split into row (Y) and column (X) request. Readout cells have been implemented at the border of the pixel array, one per row/ column creating readout chains and allowing the circulation of an asynchronous flag at very high speed (one per axis) (Fig 2).  After each step of the voltage ramp (Vramp), a scan of all the rows is performed by sending a flag on the Y axis. If a comparator flip has occurred in a pixel, a readout request is placed on the pixel row (reqY). The Y flag is stopped at this line and an acknowledge signal is sent on the row (ackY) by the corresponding readout cell. At the receipt of the acknowledge signal, an in-pixel logic block emits the readout request on the column (reqX). As a requesting line has been detected, the X flag is started to scan the column. The X flag is stopped on the requesting column and an acknowledge signal is send (ackX). At the receipt of the two acknowledge signals, the pixel is attributed the DAC digital input value and is placed in reset mode, until the capture of the next frame (Initb) (Fig 4). Therefore, each pixel is read only once during a given frame.    As only one row and one column can be selected at a time, the connection of the acknowledge signals to the input of fast asynchronous encoders allows to obtain the coordinates of the read pixel. Encoders also generate signals to notify the presence of valid coordinate data at the sensor output for external memorization. The readout of the entire sensor is performed for each Vramp step and is completed when the last row readout cell frees the Y flag. Using this principle, no conflicts can occur.   3. MULTIPLE INTEGRATION AND DYNAMIC COMPRESSION FUNCTION.   3.1 Dynamic extension using multiple integration.   During the integration, the photodiode capacitance accumulates the photogenerated carriers, and its voltage decreases linearly with time. Therefore, for a given illumination level, the modification of the integration time will have an effect on the resulting photodiode voltage. In the HDR problematic, the photocurrent variation induced by the broad scene illumination range has huge amplitude, covering at least 6 decades (120dB) dynamic range. The multiple integration principle allows covering such a photocurrent range. Short integration times limit the photodiode voltage drop at low illumination level, and so bright pixel value are usable. For dark pixels with small photocurrent, the voltage drop induced must be large enough to be readable with the limited DAC resolution. This can be achieved using longer integration times (Fig 5).     By using a panel of integration times, the dynamic of the sensor can be widely expanded.   3.2 Dynamic compression function.   In order to have no redundancy and therefore avoid reading the entire pixel array at each integration, each possible illuminance of the captured scene must be processed in a unique integration. To reach this goal, the integrations will be performed from the shortest to the longest, and only a part of the photodiode voltage swing will be explored by the DAC at each integration [Vrefmin, Vrefmax]( Fig 6).     Vrefmax corresponds to the lower illumination level processed in the current integration, and Vrefmin to the biggest one. Therefore, all the pixels with a photodiode voltage higher than Vrefmax are processed in the longer integration times (darker pixel), and the more illuminated pixel, which photodiode voltage is lower than Vrefmin, are processed in the shorter integrations. The Vref offset to apply to the DAC voltage sweep can be easily computed using the integration time ratio. In the longer integration, the voltage ramp must reach the photodiode reset voltage to be sure to read all the pixels of the array.  In order to obtain a coherent spreading of the 10 bits digital pixel output values, the 10 bits word have been split into Most Significant Bits (MSB) and Least Significant Bits (LSB), using the mantissa exponent principle [10]. The MSB code the integration number and the LSB the measured photodiode voltage. The number of MSB being defined by the chosen number of integration, the induced number of LSB define the number of Vramp step, constant for all the integrations. The DAC voltage step being constant (1 mV), a dynamic compression function is obtained, allowing the generation of only 1024 possible pixel output values from the 220 levels of possible scene illuminances (Fig 7).     Ratios between the slope of the segments building the compression function are defined by the ratios between the integration times.  3.3 Dynamic compression example.   This example uses 8 integrations with a constant ratio equal to 4. In order to number the integrations, 3 MSB are necessary. The DAC Voltage will then sweep 127 values per integration (7 LSB). Chosen integration times are:  Table 1. integration times definition.   In order to distribute the possible scene illuminance over the different integration without redundancies and therefore to keep the continuity and bijectivity of the compression function, the Vref offset must be computed for each integration:  Table 2. Digitizing voltage swing for each integration.      The obtained Vref voltage is shown figure 8 and the defined compression function is presented figure 9.     The effect of this compression function on a HDR image is shown figure 10.     4. EXPERIMENTAL RESULTS.   A prototype with a 511x511 pixel array has been realized in 0.13 μm STMicroelectronics digital CMOS technology. Containing 42 transistors, the pixel size is 10μm by 10μm with a fill factor of 25% (cf. Fig 11).     The event-driven readout principle defined is completely functional. As soon as a readout request occurs, it is processed and the concerned pixel is attributed the right pixel value. Once read, pixels are maintained in standby mode until the next sequence of integrations. This operation also allows reducing power consumption by disabling all the pixels that have been already read-out. After several tests, it can be assumed that no error in the readout process occurs.  The shutter switch of the pixel allows storing the photodiode voltage during digitizing. Even with the multi layer light shielding implemented, the readout node is still slightly light sensitive. However, due to the fast readout of the pixel array, this point is not critical.  Even with a leakage problem due to the non optimized technology used, the dynamic range of the sensor has been increased by 2000 percent by this principle.  Images of HDR scenes have been captured with this sensor (cf. Fig. 13). Because of the computer graphic resolution limited to 256 gray scale level, 4 images are necessary to cover the 1023 possible pixel output values (cf. fig 14).       5. CONCLUSION.   Using a new principle, an ultra wide dynamic range CMOS image sensor has been defined, mostly digital, and very versatile. Numerous dynamic compression functions can be performed by changing the mantissa exponent code definition or by modifying the integration times ratios.  With this architecture, other functions can be performed such as level detection using a constant voltage instead of a ramp to digitize the pixels. Furthermore, by replacing the DAC value by a binning down counter, an histogram-equalized image can be obtained, as well as the histogram itself, both in real time, which can be used for image post-processing .  According to the characterizations of the sensor it can be assumed that the Dynamic extension principle defined is completely validated. A new version of the sensor realized in STMicroelectronics’ imager technology should permit to support huge scene dynamic range (more than 120 dB) by minimizing the leakage issue.  REFERENCES    1. S. Kavadias, B. Dierickx, D. Scheffer, A. Alaerts, D. Uwaerts, J. Bogaerts, "A Logarithmic Response CMOS Image Sensor with On-Chip Calibration", IEEE Journal of Solid-State Circuits, Volume 35, Number 8, August 2000.   2. B. Choubey, "An electronic-calibration scheme for logarithmic CMOS pixels.", IEEE sensors journal, vol 6, N° 4, August 2006.   3. T. F. Knight, "Design of an Integrated Optical Sensor with On-Chip Preprocessing ". PhD thesis, MIT, 1983.   4. M. Sayag, "Non-linear Photosite Response in CCD Imagers." U.S Patent No. 5,055,667, 1991. Filed 1990.   5. S. Decker, R. McGrath, K. Brehmer, and C. Sodini, “A 256x256 CMOS imaging array with wide dynamic range pixels and column-parallel digital output,” in ISSCC Dig. Tech. Papers, San Francisco, CA, Feb.1998, pp. 176–177.   6. M. Mase, S. Kawahito, M. Sasaki, Y. Wakamori, “A19.5b Dynamic Range CMOS Image Sensor with 12b Columnparallel Cyclic A/D Converters.”, IEEE ISSCC pp350-351, february 2005.   7. M. Schanz, C. Nitta, T. Eckart, B.J. Hosticka, R. Wertheimer, “ A high dynamic range CMOS Image Sensor for Automotive applications”, Proceedings of the 25th european solid-state circuits conference, September 1999.   8. Y. Yang, S.L. Barna, S. Campbell, E.R. Fossum, “ A high dynamic range CMOS APS Image sensor”, IEEE Workshop on charge-coupled devices and avanced image sensors, june 2001.   9. D. Yang, B. Fowler, A. El Gamal, “A Nyquist-Rtae Pixel-Level ADC for CMOS Image Sensors”, IEEE Journal of solid state circuits, vol34, N°3, march 1999.   10. O. Yadid-Pecht, A. Belenky, “Autoscaling CMOS APS with customized increase of dynamic range”, Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International 5-7 Feb. 2001 Page(s):100 - 101  

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A digital high-dynamic-range CMOS image sensor with multi-integration and pixel readout request

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