Using ab-initio calculations and atomic-resolution Z-contrastimag-ing and electron energy-loss spectroscopy, we show thatoxidation of a germanium-implanted Si surface can produce anatomically-sharp interface with a band structure that seems tobe more favor-able for use in electronic devices than theusually diffuse interface in Si/SiO_2. Furthermore, wepropose an ab-initio based Monte-Carlo model to simulateoxidation of SiGe alloys to better under-stand the formation ofthe sharp interface
