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Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors
Authors
Travis J. Anderson
Fernando Calle Gómez
+4 more
Roberto Cuerdo Bragado
Karl D. Hobart
Sara Martin Horcajo
Marko Jak Tadjer
Publication date
1 January 2011
Publisher
'Wiley'
Doi
Abstract
Relacionado con línea de investigación del GDS del ISOM ver http://www.isom.upm.es/dsemiconductores.ph
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oai:oa.upm.es:11895
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info:doi/10.1002%2Fpssc.201001...
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oai:oa.upm.es:11895
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