量子阱结构对GaN基紫光二极管性能的影响

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Abstract

采用不同MQW结构在MOCVD系统上生长UV-LED外延片。对样品进行了X射线衍射、电注入发光(EL)和光致发光谱(PL)测试,通过优化LED器件材料的生长条件,获得了光发光特性一般而电发光特性优良的高质量多量子阱紫光LED外延片

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    Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences

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    Last time updated on 13/07/2018