Within the context of quantum dot Intermediate Band Solar Cells (QD-IBSC), it is of interest to investigate the maximum value that can be achieved for the smaller of the transitions (EL), since values larger than 0.3 eV are required for improved performance. This work provides both theoretical and experimental arguments to verify the shift of the IB position to deeper energies by using an Inx(GayAl1−y)1−xAs capping layer, fulfilling the double function of increasing the QD size and eliminating the discontinuity in the conduction band between the quaternary cap and the GaAs barrier
