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unknown
Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.
Authors
A. Makarimi Abdullah
Sabar D. Hutagalung
Zainovia Lockman
Publication date
1 August 2010
Publisher
Abstract
Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns
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Last time updated on 17/07/2013