This paper presents a physics-based compact model of integrated gate-commutated thyristor (IGCT) with multiple
effects for high power application. The proposed model has both acceptable accuracy and computation time requirement,
which is suitable for system level circuit simulation and IGCT’s whole wafer modelling work. First, the development of IGCT
model is discussed and the one-dimension phenomenon of IGCT is analyzed in the paper. Second, a physics-based compact
model of IGCT is proposed. The proposed model of IGCT includes multiple physical effects that are crucial to IGCTs working
in high power applications. These physical effects include the impact ionization effect, moving boundary of depletion region
during punch-thourgh (PT) and the local lifetime region. The Fourier series solution is applied for the ambipolar diffusion
equation in the base region. Third, the proposed model is implemented in Simulink and compared with the model in Silvaco
Atlas, a finite-element (FEM) tool. Finally, the proposed compact model of IGCT is validated by experiments
