We experimentally demonstrate tunable, highly-stable frequency combs with
high repetition-rates using a single, charge injection based silicon PN
modulator. In this work, we demonstrate combs in the C-band with over 8 lines
in a 20-dB bandwidth. We demonstrate continuous tuning of the center frequency
in the C-band and tuning of the repetition-rate from 7.5GHz to 12.5GHz. We also
demonstrate through simulations the potential for bandwidth scaling using an
optimized silicon PIN modulator. We find that, the time varying free carrier
absorption due to carrier injection, an undesirable effect in data modulators,
assists here in enhancing flatness in the generated combs.Comment: 10 pages, 7 figure