Defects Formed During 1 MeV Si Ion-Irradiation of GeSi/Si Strained Layer Heterostructures at Elevated Temperature

Abstract

The strain relief observed in GeSi/Si strained-layer heterostructures irradiated with MeV ions at elevated temperature (253°C) is shown to be consistent with the accumulation of excess vacancies in the alloy layer. Partial recovery of the asgrown strai