High temperature rapid thermal annealing of phosphorous ion implanted InAs∕InP quantum dots

Abstract

The effect of high temperature annealing of the InAs∕InPquantum dots(QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900°C for 30s. The QDs with the GaAs interlayer show good thermal stability up to 850°C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy(450keV) phosphorous ion implantation at room temperature with doses of 5×10¹¹–5×10¹³ions/cm² with subsequent high temperature (750–850°C)rapid thermal annealing is also studied. A large implantation-inducedenergy shift of up to 309meV (400nm) is observed. The implanted samples annealed at 850°C show reduced PL linewidth and enhanced integrated PL intensity compared to the implanted samples annealed at 750°C.The authors gratefully acknowledge financial support from the Australian Research Council