Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection

Abstract

High operating temperature i nfrared photo detectors with multi -color function that are capable of monolithic integration are of increasing importance in developing the next generation of mid -IR imag e sensors. Applications of these sensors include defense, medical diagnosis, environmental and astronomical observations. We have investigated a novel InAsSb -based nBnBn heterostructure that combines a state -of-art InAsSb nBn detector with an InAsSb/GaSb heterojuncti on detector . At room temperature, r educti on in the dark current density of more than an order of magnitude was achieved compared to previously investigated InAsSb/GaSb heterojunction dete ctors . Electrical characterization from cryogenic temperatures to roo m temperature confirmed that the nBnBn device was diffusion limited for temperature s above 150K. O ptical measurements demonstrated that the nBnBn detector was sensitive in both the SWIR and MWIR wavelength range at room temperature . The specific detectivity (D*) of the competed nBnBn devices was calculated to be 8.6 × 10 8 cm · Hz 1/2 W -1 at 300K and approximately 1.0 × 10 10 cm · Hz 1/2 W -1 when cooled down to 200K (with 0.3V reverse bias and 1550nm illumination ). In addition, all photodetector layers were grown monolithically on GaAs active layers u sing the interfacial misfit array growth mode . Our results therefore pave the way for the development of new active pixel designs for monolithically integrated mid -IR imaging arrays