Volkmann, Christian

The construction of a novel “hot and cold wall, cross laminar flow multiple substrate
atomic layer deposition reactor” is presented including a LabView based control program
and an user-optimized graphical user interface. The chamber was successfully
tested by the improvement of three different materials with respect to growth rates
and impurity content by well chosen depositional parameter (AlOx, Pt and Ir). The
synthesis of a new multilayer system is introduced by forming nanolaminates made
with alternating platinum and aluminium oxide ALD. Theses structures were probed
by transient temperature-dependent reflectivity (TTR) and Rydberg atom tagging
(RAT), respectively. The outstanding decrease in heat conductivity as well as the
possibility of the formation of a super thin isolation layer on metals for atom scattering
purposes were proven with these techniques.
Deposition experiments aiming for cobalt or cobalt oxide thin films using a new kind
of precursor design within the elusive ALD procedure are discussed. Thin films are
presented with growth rates comparable to the literature values, being very small.
However, the examination of this procedure revealed a possible decomposition pathway
prohibiting ALD.
Beyond that, an ALD strategy is investigated to generate thin tantalum oxide and the
still unreported sulphide films with outstanding qualities, such as lowest roughness,
unequalled mild deposition temperature and sufficient growth rates.2018-11-2

Georg-August-University Göttingen

Atomic layer deposition of metal and metal chalcogenide thin films and nanolaminate composites.

https://ediss.uni-goettingen.de/bitstream/11858/00-1735-0000-002E-E3AE-5/1/Doktorarbeit_CVolkmann_2017.pdf

Atomic layer deposition of metal and metal chalcogenide thin films and nanolaminate composites.

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Georg-August-University Göttingen