Improved Electrical Conductivity
of Graphene Films
Integrated with Metal Nanowires
- Publication date
- Publisher
Abstract
Polycrystalline graphene grown by chemical vapor deposition
(CVD)
on metals and transferred onto arbitrary substrates has line defects
and disruptions such as wrinkles, ripples, and folding that adversely
affect graphene transport properties through the scattering of the
charge carriers. It is found that graphene assembled with metal nanowires
(NWs) dramatically decreases the resistance of graphene films. Graphene/NW
films with a sheet resistance comparable to that of the intrinsic
resistance of graphene have been obtained and tested as a transparent
electrode replacing indium tin oxide films in electrochromic (EC)
devices. The successful integration of such graphene/NW films into
EC devices demonstrates their potential for a wide range of optoelectronic
device applications