Naphtho[2,1-<i>b</i>:6,5-<i>b</i>′]difuran: A Versatile Motif Available for Solution-Processed Single-Crystal Organic Field-Effect Transistors with High Hole Mobility

Abstract

We here report naphtho­[2,1-<i>b</i>:6,5-<i>b</i>′]­difuran derivatives as new p-type semiconductors that achieve hole mobilities of up to 3.6 cm² V^–1 s^–1 along with high <i>I</i>_on/<i>I</i>_off ratios in solution-processed single-crystal organic field-effect transistors. These features originate from the dense crystal packing and the resulting large intermolecular π-orbital overlap as well as from the small reorganization energy, all of which originate from the small radius of an oxygen atom