Bandlike Transport in
Strongly Coupled and Doped Quantum
Dot Solids: A Route to High-Performance Thin-Film Electronics
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Abstract
We report bandlike transport in solution-deposited, CdSe
QD thin-films
with room temperature field-effect mobilities for electrons of 27
cm<sup>2</sup>/(V s). A concomitant shift and broadening in the QD
solid optical absorption compared to that of dispersed samples is
consistent with electron delocalization and measured electron mobilities.
Annealing indium contacts allows for thermal diffusion and doping
of the QD thin-films, shifting the Fermi energy, filling traps, and
providing access to the bands. Temperature-dependent measurements
show bandlike transport to 220 K on a SiO<sub>2</sub> gate insulator
that is extended to 140 K by reducing the interface trap density using
an Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> gate insulator. The
use of compact ligands and doping provides a pathway to high performance,
solution-deposited QD electronics and optoelectronics
