Chemical Control of Semiconductor Nanowire Kinking and Superstructure

Abstract

We show that methylgermane (GeH₃CH₃) can induce a transition from ⟨111⟩ to ⟨110⟩ oriented growth during the vapor–liquid–solid synthesis of Ge nanowires. This hydride-based chemistry is subsequently leveraged to rationally fabricate kinking superstructures based on combinations of ⟨111⟩ and ⟨110⟩ segments. The addition of GeH₃CH₃ also eliminates sidewall tapering and enables Ge nanowire growth at temperatures exceeding 475 °C, which greatly expands the process window and opens new avenues to create Si/Ge heterostructures