Integrated Circuits Based
on Bilayer MoS<sub>2</sub> Transistors
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Abstract
Two-dimensional (2D) materials, such as molybdenum disulfide
(MoS<sub>2</sub>), have been shown to exhibit excellent electrical
and optical
properties. The semiconducting nature of MoS<sub>2</sub> allows it
to overcome the shortcomings of zero-bandgap graphene, while still
sharing many of graphene’s advantages for electronic and optoelectronic
applications. Discrete electronic and optoelectronic components, such
as field-effect transistors, sensors, and photodetectors made from
few-layer MoS<sub>2</sub> show promising performance as potential
substitute of Si in conventional electronics and of organic and amorphous
Si semiconductors in ubiquitous systems and display applications.
An important next step is the fabrication of fully integrated multistage
circuits and logic building blocks on MoS<sub>2</sub> to demonstrate
its capability for complex digital logic and high-frequency ac applications.
This paper demonstrates an inverter, a NAND gate, a static random
access memory, and a five-stage ring oscillator based on a direct-coupled
transistor logic technology. The circuits comprise between 2 to 12
transistors seamlessly integrated side-by-side on a single sheet of
bilayer MoS<sub>2</sub>. Both enhancement-mode and depletion-mode
transistors were fabricated thanks to the use of gate metals with
different work functions