Growth of Crystalline
Copper Silicide Nanowires in
High Yield within a High Boiling Point Solvent System
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Abstract
Here, we report the formation of high density arrays
of Cu<sub>15</sub>Si<sub>4</sub> nanowires using a high boiling point
organic
solvent based method. The reactions were carried out using Cu foil
substrates as the Cu source with nanowire growth dependent upon the
prior formation of Cu<sub>15</sub>Si<sub>4</sub> crystallites on the
surface. The method shows that simple Si delivery to metal foil can
be used to grow high densities of silicide nanowires with a tight
diameter spread at reaction temperatures of 460 °C. The nanowires
were characterized by high-resolution transmission electron microscopy
(HRTEM), high-resolution scanning electron microscopy (HRSEM), and
X-ray photoelectron spectroscopy (XPS), and electrical analysis showed
that they possess low resistivities