Electronic Origin of the
Surface Reactivity of Transition-Metal-Doped
TiO<sub>2</sub>(110)
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Abstract
We investigate the surface reactivity of doped rutile
M-TiO<sub>2</sub>(110) (M = V, Cr, Mo, W, Mn, Fe, Ru, Co, Ir, and
Ni) using
density functional theory (DFT) and Hubbard-<i>U</i> corrected
DFT calculations (DFT+<i>U</i> method). The oxygen adsorption
bond, used as the surface reactivity measure, is stronger on the doped
TiO<sub>2</sub> surfaces as compared with that on the undoped TiO<sub>2</sub> surface. We relate this increase in reactivity of the doped
TiO<sub>2</sub> surfaces to the presence of localized surface resonances
and surface states in the vicinity of the Fermi level. We find that
the center of these localized states on doped TiO<sub>2</sub> is a
good descriptor for the oxygen adsorption energy. The inclusion of
the Hubbard-<i>U</i> correction to DFT barely modifies the
oxygen adsorption energy on undoped TiO<sub>2</sub>, whereas it destabilizes
the oxygen adsorption energies on doped TiO<sub>2</sub> when compared
with results from standard DFT. Nevertheless, we find that the oxygen
adsorption energy trends predicted by a standard GGA-DFT functional
are reproduced when the Hubbard-<i>U</i> correction is applied