Phalaena plecta
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Abstract
Semiconducting nanowires have unique properties that
are distinct
from their bulk counterparts, but realization of their full potential
will be ultimately dictated by the ability to control nanowire structure,
composition, and size with high accuracy. Here, we report a simple,
yet versatile, approach to modulate in situ the diameter, length,
and composition of individual segments within (In,Ga)N nanowires by
tuning the seed particle supersaturation and size via the supply of
III and V sources during the growth. By elucidating the underlying
mechanisms controlling structural evolution, we demonstrate the synthesis
of axial InN/InGaN nanowire heterojunctions in the nonpolar <i>m</i>-direction. Our approach can be applied to other materials
systems and provides a foundation for future development of complex
nanowire structures with enhanced functionality