Growth of Vertical GaAs Nanowires on an Amorphous
Substrate via a Fiber-Textured Si Platform
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Abstract
We demonstrate the vertical self-catalyzed
molecular beam epitaxy
(MBE) growth of GaAs nanowires on an amorphous SiO<sub>2</sub> substrate
by using a smooth [111] fiber-textured silicon thin film with very
large grains, fabricated by aluminum-induced crystallization. This
generic platform paves the way to the use of inexpensive substrates
for the fabrication of dense ensembles of vertically standing nanowires
(NWs) with promising perspectives for the integration of NWs in devices