Energetics of Electron–Hole Separation at P3HT/PCBM
Heterojunctions
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Abstract
The energetics of electron–hole
separation at the prototypical
donor–acceptor interface P3HT/PCBM is investigated by means
of a combination of molecular dynamics simulations, quantum-chemical
methods, and classical microelectrostatic calculations. After validation
against semiempirical Valence Bond/Hartree–Fock results, microelectrostatic
calculations on a large number of electron–hole (e-h) pairs
allowed a statistical study of charge separation energetics in realistic
morphologies. Results show that charge separation is an energetically
favorable process for about 50% of interfacial e-h pairs, which provides
a rationale for the high internal quantum efficiencies reported for
P3HT/PCBM heterojunctions. Three effects contribute to overcome the
Coulomb attraction between electron and hole: (i) favorable electrostatic
landscape across the interface, (ii) electronic polarization, and
(iii) interface-induced torsional disorder in P3HT chains. Moreover,
the energetic disorder due to the PCBM polar group is shown to play
a key role in increasing the dissociation probability