Yellow Luminescence of Polar and Nonpolar GaN Nanowires
on <i>r</i>‑Plane Sapphire by Metal Organic Chemical
Vapor Deposition
- Publication date
- Publisher
Abstract
We
have grown horizontal oriented, high growth rate, well-aligned
polar (0001) single crystalline GaN nanowires and high-density and
highly aligned GaN nonpolar (11–20) nanowires on <i>r</i>-plane substrates by metal organic chemical vapor deposition. It
can be found that the polar nanowires showed a strong yellow luminescence
(YL) intensity compared with the nonpolar nanowires. The different
trends of the incorporation of carbon in the polar, nonpolar, and
semipolar GaN associated with the atom bonding structure were discussed
and proved by energy-dispersive X-ray spectroscopy, suggesting that
C-involved defects are the origin responsible for the YL in GaN nanowires