Logic-Gate Devices Based on Printed Polymer Semiconducting
Nanostripes
- Publication date
- Publisher
Abstract
The applications of organic semiconductors
in complex circuitry
such as printed CMOS-like logic circuits demand miniaturization of
the active structures to the submicrometric and nanoscale level while
enhancing or at least preserving the charge transport properties upon
processing. Here, we addressed this issue by using a wet lithographic
technique, which exploits and enhances the molecular order in polymers
by spatial confinement, to fabricate ambipolar organic field effect
transistors and inverter circuits based on nanostructured single component
ambipolar polymeric semiconductor. In our devices, the current flows
through a precisely defined array of nanostripes made of a highly
ordered diketopyrrolopyrrole-benzothiadiazole copolymer with high
charge carrier mobility (1.45 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> for electrons and 0.70 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> for holes). Finally, we demonstrated
the functionality of the ambipolar nanostripe transistors by assembling
them into an inverter circuit that exhibits a gain (105) comparable
to inverters based on single crystal semiconductors