Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN
Core–Shell Nanowire Light-Emitting Diode Array
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Abstract
Correlated atom probe tomography,
cross-sectional scanning transmission
electron microscopy, and cathodoluminescence spectroscopy are used
to analyze InGaN/GaN multiquantum wells (QWs) in nanowire array light-emitting
diodes (LEDs). Tomographic analysis of the In distribution, interface
morphology, and dopant clustering reveals material quality comparable
to that of planar LED QWs. The position-dependent CL emission wavelength
of the nonpolar side-facet QWs and semipolar top QWs is correlated
with In composition