Graphene for True Ohmic Contact at Metal–Semiconductor Junctions

Abstract

The rectifying Schottky characteristics of the metal–semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni–Si junction, one of the most commonly used metal–semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10^–8 ∼ 10^–9 Ω cm² at a Si doping concentration of 10¹⁷ cm^–3