Spin Transfer Torque in a Graphene Lateral Spin Valve
Assisted by an External Magnetic Field
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Abstract
Spin-based devices are widely discussed
for post-complementary
metal–oxide–semiconductor (CMOS) applications. A number
of spin device ideas propose using spin current to carry information
coherently through a spin channel and transfering it to an output
magnet by spin transfer torque. Graphene is an ideal channel material
in this context due to its long spin diffusion length, gate-tunable
carrier density, and high carrier mobility. However, spin transfer
torque has not been demonstrated in graphene or any other semiconductor
material as of yet. Here, we report the first experimental measurement
of spin transfer torque in graphene lateral nonlocal spin valve devices.
Assisted by an external magnetic field, the magnetization reversal
of the ferromagnetic receiving magnet is induced by pure spin diffusion
currents from the input magnet. The magnetization switching is reversible
between parallel and antiparallel configurations, depending on the
polarity of the applied charged current. The presented results are
an important step toward developing graphene-based spin logic and
understanding spin-transfer torque in systems with tunneling barriers