Dynamic Process of Phase Transition from Wurtzite
to Zinc Blende Structure in InAs Nanowires
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Abstract
In
situ high-resolution transmission electron microscopy revealed
the precipitation of the zinc-blende (ZB) structure InAs at the liquid/solid
interface or liquid/solid/amorphous carbon triple point at high temperature.
Subsequent to its precipitation, detailed analysis demonstrates unique
solid to solid wurtzite (WZ) to ZB phase transition through gliding
of sharp steps with Shockley partial dislocations. The most intriguing
phenomenon was that each step is 6 {111} atomic layers high and the
step migrated without any mechanical stress applied. We believe that
this is the first direct <i>in situ</i> observation of WZ–ZB
transition in semiconductor nanowires. A model was proposed in which
three Shockley partial dislocations collectively glide on every two
{0001} planes (corresponds to six atomic planes in an unit). The collective
glide mechanism does not need any applied shear stress