Interface Thermodynamic State-Induced High-Performance Memristors
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Abstract
A new
class of memristors based on long-range-ordered CeO<sub>2</sub> nanocubes
with a controlled degree of self-assembly is presented,
in which the regularity and range of the nanocubes can be greatly
improved with a highly concentrated dispersed surfactant. The magnitudes
of the hydrophobicity and surface energy components as functions of
surfactant concentration were also investigated. The self-assembled
nanostructure was found to demonstrate excellent degradation in device
threshold voltage with excellent uniformity in resistive switching
parameters, particularly a set voltage distribution of ∼0.2
V over 30 successive cycles and a fast response time for writing (0.2
μs) and erasing (1 μs) operations, thus offering great
potential for nonvolatile memory applications with high performance
at low cost